The Hybrid D Flip-Flop (Hybrid D-FF) is a compact, low-power, fully digital sequential logic IP designed for near-threshold computing (NTC) systems. It is implemented in a 28 nm low-power CMOS process and operates reliably down to 0.25 V, making it ideal for energy-efficient SoCs and low-voltage digital platforms. The flip-flop is fully compatible with standard digital design flows and require no external biasing or control signals beyond the clock (CK) and data (D) inputs.
This flip-flop features a hybrid architecture that combines the robustness of transmission-gate flip-flops (TGFF) with the speed and simplicity of true single-phase clock (TSPC) logic. The design utilizes both feedback and feedforward paths to improve data stability and reduce output delays. The input (D) is sampled on the rising edge of the clock (CK), and the output (Q) is updated accordingly. No asynchronous set or reset is included, allowing for minimal area and power overhead.
Structurally, the Hybrid-FF is composed of a small number of transistors (20 total, including clock inverters), a split TSPC-style latch, and a compact clocking scheme that ensures full voltage transitions without contention. The latch stage employs a feedback loop for stability and a carefully tuned capacitance path to minimize clock-to-Q delay. Architecture eliminates the Vth drop issue commonly found in TSPC designs and ensures full-swing outputs under low voltage.
Feature
· • Hybrid Transmission-Gate + TSPC Flip-Flop Architecture
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– Combines advantages of TGFF (robustness) and TSPC (speed) in a compact hybrid form
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– Contention-free operation at near-threshold(NTC) voltage
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• Excellent Low-Voltage Operation
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– Reliable operation down to 0.25 V @ 1 MHz
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– Outperforms prior FFs (TGFF, CSFF) in both delay and power under NTC
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• High-Speed & Low-Energy Performance
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– C-Q delay: 329 ps @ 1.0 V
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– Setup/Hold Time: 268 ps / −236 ps
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• Ultra-Low Power Consumption
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– Total power: 3.64 µW @ 1.0 V, 1 GHz, 20% activity
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• Compact Area and Low Transistor Count
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– 3.92 µm² layout area in Samsung 28 nm LP process
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– 20 transistors including clock inverters
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• Fully Functional at Ultra-Low VDD
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– Demonstrated success at all corners down to 0.25 V
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– Only flip-flop that operates below 0.26 V without complex clocking
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• Activity Scalable Power Efficiency
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– Power scales linearly with switching activity (tested from 10% to 50%)
Application
· Process-In-Memory Application (ex. Digital controller)
Business Area
Automotive Radar or LiDAR system, Memory system
Category
Memory & Logic Library > Other
Deliverables
· Schematic netlist, layout and testbench
Validation Status
· Silicon-proven
Availability
Samsung 28nm Only