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POPUP ZONE

KAIST PIM반도체설계연구센터 이론 교육
회원 개인정보 추가 작성 요청
KAIST AI-PIM PIM반도체연구센터

IP 검색

파워업 감지회로

The Power-On Reset (POR) circuit is an analog IP designed to generate a reliable reset signal during both power-up and power-down sequences. Implemented in a standard CMOS process, this IP ensures that digital and mixed-signal systems remain in a known safe state until the supply voltage reaches a stable threshold, enabling robust startup behavior across a wide range of conditions.
The POR IP is composed entirely of analog building blocks and requires no external clock, biasing, or digital input control. It receives a single analog input (VDD) and outputs a digital reset signal (VOUT). The core signal path consists of a voltage divider, temperature compensator, and reset signal generator. The voltage divider provides a scalable reference for comparison, while the temperature compensator suppresses variations in threshold voltage due to temperature changes. The reset signal generator includes a carefully sized inverter chain with embedded hysteresis for stable switching behavior.
The circuit is designed to generate the reset signal when the supply voltage crosses a defined rising threshold during power-up, and to reassert the reset during power-down when the voltage drops below a falling threshold. The built-in hysteresis ensures noise immunity and eliminates false resets due to supply ripples or slow ramping.

Feature
· • Robust Power-On Reset (POR) Circuit for Sub-1V Systems
· – Generates reliable reset signal during both Power-up and Power-down transitions
· – Functions across a wide temperature range (−20 °C to 85 °C)
· • Integrated Hysteresis Behavior
· – Built-in hysteresis of 112 mV prevents false triggering during supply voltage fluctuations
· – Reset-off voltage is clearly separated from Reset-on, improving system robustness
· • Fast and Reliable Response
· – Reset signal generated after inverter threshold crossing with minimal propagation delay
· • PVT Tolerance
· – Trimmed TC for TT: 53 ppm/°C (Rising), 39 ppm/°C (Falling)
· • Low Power Consumption
· – Quiescent current consumption of 20 μA at 1 V
· • Compact Silicon Footprint
· – Total layout area: 723 μm² in standard CMOS process
· • Self-Contained and No External Components Required
· – No external bias or capacitor needed for reset generation
· – Simple integration into digital or analog SoC power management domains
Application
· Process-In-Memory Application (Power management for analog computing-based CNN layer and digital con
Business Area
Automotive Radar or LiDAR system, Memory system
Category

Analog & Mixed Signal > Power Management > Other


Tech Specs
  • IP Name :

    파워업 감지회로

  • Provider :

    Minoo Lee, Junghyup Lee

  • Foundry :

    SAMSUNG

  • Technology :

    28nm

Deliverables
· Schematic netlist, layout and testbench
Validation Status
· Simulation-proven
Availability
Samsung 28nm Only
Functional Diagram
Benefits
·
List